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Control of the growth quality by optimizing the crucible structure for
*Growths of SiC Single Crystals Using the Physical Vapor Transport *
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Performance Solutions for Semiconductors20240807
*Numerical Simulation of a Novel Method for PVT Growth of SiC by *
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Porous graphite fabricated by liquid metal dealloying of silicon carbide
*China Graphite Soft Felt for Thermal Barrier Applications *
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Porous Graphite for High Quality SiC Crystal Growth by PVT Method
*Porous Graphite for High Quality SiC Crystal Growth by PVT Method *
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EP2851456A1 - Large Diameter, High Quality SiC Single Crystals
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Determination of Thermal Properties of Carbon Materials above
SiC Single Crystal Growth and Substrate Processing | SpringerLink
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Performance Carbon Solutions for Semiconductor
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